Real-world scenarios where conventional labs reach their limits and MEP delivers breakthrough insights.
Conventional TEM cannot handle >50 nm thick TSV cross-sections. MEP reconstructs 100+ nm Cu/SiO₂ interfaces at atomic resolution, revealing diffusion barriers and void formation.
Sub-picometer strain tensors across nanosheet stacks. Quantify process-induced strain in 2nm-class devices — critical for mobility engineering and threshold voltage tuning.
Map polarization vortices, skyrmions, and flux-closure domains in HfO₂-based ferroelectrics. Direct observation of atomic displacements enables predictive device modeling.
Atomic-resolution observation of Li-ion migration paths across solid-electrolyte / cathode interfaces. Identify dendrite nucleation sites and grain boundary defects in LLZO/LCO stacks.
Real MEP reconstructions from our founding team's published and collaborative research — the same engine that powers our software and services.
Individual point defects resolved atom by atom — C-B-C vs C-V-C chain configurations distinguished directly in the reconstruction, validated against multislice simulation.
S. Ning et al., Science Advances 11, eadr4648 (2025)
Layer-resolved reconstruction of a 5 nm + 5 nm twisted stack: upper and lower lattices and the moiré interface separated along the beam direction — impossible with projection imaging.
Founding team research, Univ. of Tokyo
Lu-doped Al₂O₃ Σ13 grain boundary imaged slice by slice from 0 to 36 nm depth — revealing a lateral boundary shift invisible to any 2D technique.
Founding team research, Univ. of Tokyo
Results shown are from peer-reviewed publications and collaborative research by our founding team.